DESCRIPTION

Each device is an electrically erasable programmable memory (EEPROM) fabricated with STMicroelectronics’s High Endurance, Double Polysilicon, CMOS technology. This guarantees an endurance typically well above 100,000 Erase/Write cycles, with a data retention of 40 years. The memory operates with a power supply as low as 2.5 V.

■ Compatible with I2C Extended Addressing

■ Two Wire I2C Serial Interface Supports 400 kHz Protocol

■ Single Supply Voltage (2.5 V to 5.5 V)

■ Hardware Write Control

■ BYTE and PAGE WRITE (up to 64 Bytes)

■ BYTE, RANDOM and SEQUENTIAL READ Modes

■ Self-Timed Programming Cycle

■ Automatic Address Incrementing

■ Enhanced ESD/Latch-Up Behaviour

■ 100,000 Erase/Write Cycles (minimum)

■ 40 Year Data Retention (minimum)

■ 5 ms Programming Time (typical)