Description

The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. LET9060’s superior linearity performance makes it an ideal solution for base station applications.

Features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 60 W with 17.2 dB gain @ 960 MHz / 28 V

■ New RF plastic package