Features

• AEC-Q100 qualified

• RoHs compliant device

• Power supply operating range from 4.51 V to 28 V (gate drivers operative from

5.41 V)

• 3.3 V/5 V compatible I/Os

• All pins linked to the microcontroller, fail-safe input and VDD are made tolerant

to battery exposure

• Dual half-bridge driver compatible with standard level threshold NMOSFETs

• Configurable full-bridge or dual independent half-bridges control

– Programmable recirculation path in case of full-bridge control

• Dual stage charge pump supporting 100% PWM duty cycle down to 5.41 V

battery voltage

– High and low side minimum VGS=6.2 V @ VDH=5.5 V and charge pump

load current (ICPLOAD) equal to 5 mA

– High and low side minimum VGS=8.2 V @ VDH≥8 V and charge pump

load current (ICPLOAD) equal to 10 mA

• Charge pump output available for driving an external reverse battery

NMOSFET protection

• Programmable gate driving current (up to 170 mA) for output voltage slew rate

control

• Programmable drain-source monitoring for overcurrent protection and

programmable cross-current protection time (dead-time)

• Open load and output short circuit detection in off-state diagnostic mode

• SPI for control and diagnosis (ST SPI 4.1)

• Programmable diagnostic output

• Two independent current sense amplifiers

– Low offset with extremely low thermal drift

– Suitable for high-side, in-line and low–side current sensing

– Independently programmable gain (10x, 20x, 50x, 100x)

– Analog output centered at VDD/2 or VDD/22

• Overtemperature prewarning and shutdown

• Analog and digital power supply inputs over/undervoltage protections

• Asynchronous and logic independent fail-safe input to switch off all

the MOSFETs

• Low quiescent current

• Support for random HW faults up to ASIL B