DESCRIPTION

This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.

■ TYPICAL RDS(on) = 0.48 Ω

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100 AVALANCHE TESTED

■ VERY LOW INTRINSIC CAPACITANCES

■ GATE CHARGE MINIMIZED

■ FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

APPLICATIONS

■ HIGH CURRENT SWITCHING

■ UNINTERRUPTIBLE POWER SUPPLY (UPS)

■ DC/DC COVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT.