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IRF640T中文资料
IRF640T数据手册规格书PDF详情
Description
This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources
General features
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitances
Applications
■ Switching application
IRF640T产品属性
- 类型
描述
- 型号
IRF640T
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N-channel 200V - 0.15ヘ - 15A - TO-220 MESH OVERLAY⑩ Power MOSFET
更新时间：2026-8-2 16:30:00
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
24+ |
TO-220 |
1000 |
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STMICROELECTRONICS相关芯片制造商
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