Features

■ Low input capacitance and gate charge

■ Low gate input resistance

■ Best RDS(on)*Qg in the industry

Applications

■ Switching applications

Description

These N-channel Power MOSFETs are

developed using STMicroelectronics'

revolutionary MDmesh™ technology, which

associates the multiple drain process with the

company's PowerMESH™ horizontal layout.

These devices offer extremely low on-resistance,

high dv/dt and excellent avalanche

characteristics. Utilizing ST's proprietary strip

technique, these Power MOSFETs boast an

overall dynamic performance which is superior to

similar products on the market.