Features

• AEC-Q101 qualified

• 8 μs of short-circuit withstand time at VCC = 800 V, VGE = 15 V,

TJ (start) = 175 °C

• VCE(sat) = 1.95 V (typ.) @ IC = 40 A

• Tight parameter distribution

• Positive VCE(sat) temperature coefficient

• Low thermal resistance

Applications

• Auxiliary loads

• Thermal management

• PTC heaters

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop

structure. The device is part of the MS series IGBTs, which represent an

evolution of low-loss M series specifically designed for inverter system thanks to the

outstanding short-circuit capability at high bus voltage value. Furthermore, the slightly

positive VCE(sat) temperature coefficient and very tight parameter distribution result in

safer paralleling operation.