Features

• Half-bridge topology featuring the STDRIVEG611 GaN gate driver with

integrated LDOs, separated sink/source, overcurrent protection, integrated

bootstrap diode, standby

• Equipped with 75 mΩ typ., 650 V e-mode HEMT GaN

• Tunable hard-on and hard-off dV/dt, set at 10 V/ns typ. for motor control

applications

• 10.6 to 18 V (12 V typ.) VCC supply voltage

• Onboard adjustable deadtime generator to convert a single PWM signal in

independent high-side and low-side inputs with deadtime

• Separated inputs with external deadtime can also be used

• Programmable overcurrent protection with SmartShutDown, set at 9.5 A

• Footprint for, optional, additional high-voltage bulk capacitor and bootstrap

diode

• Onboard 3.3 V regulator for external circuitry supply

• RoHS compliant.