Description

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

General features

■ NPN Transistor

■ High voltage capability

■ Low spread of dynamic parameters

■ Minimum lot-to-lot spread for reliable operation

■ Very high switching speed

■ Fully characterized at 125 °C

■ In compliance with the 2002/93/EC European Directive

Applications

■ Electronic ballast for fluorescent lighting

■ Dedicated for PFC solution in HF ballast half bridge voltage fed