•AQG 324 qualified

• 1200 V blocking voltage

• 3.5 mΩ of typical RDS(on)

• Maximum operative junction temperature TJop = 175 °C

• Very low switching energy

• Low inductive compact design for an higher power density

• Si3N4 AMB substrate to improve thermal performance

• SiC Power MOSFET chip sintered to substrate for improved lifetime

• 4.2 kV DC 1 s insulation

• Direct cooled Cu base plate with pin fins

• Three integrated NTC temperature sensors