DESCRIPTION

The V2G00 is an advanced high-speed CMOS SINGLE 2-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology.

■ HIGH SPEED: tPD = 3.7ns (TYP.) at VCC = 5V

■ LOW POWER DISSIPATION:

ICC = 1µA(MAX.) at TA=25°C

■ HIGH NOISE IMMUNITY:

VNIH = VNIL = 28 VCC (MIN.)

■ POWER DOWN PROTECTION ON INPUTS

■ SYMMETRICAL OUTPUT IMPEDANCE:

|IOH| = IOL = 8mA (MIN)

■ BALANCED PROPAGATION DELAYS:

tPLH ≅ tPHL

■ OPERATING VOLTAGE RANGE:

VCC(OPR) = 2V to 5.5V

■ IMPROVED LATCH-UP IMMUNITY