Description

The device is manufactured using high voltage Multi Epitaxial Mesa technology adopting Hollow Emitter structure to enhance switching performances.

General features

■ High voltage and high current capability

■ Low spread of dynamic parameters

■ Low base-drive requirements

■ Very high switching speed

■ High ruggedness

■ Fully insulated power package U.L. compliant

Applications

■ Switch mode power supplies for CRT TV