Description

The device in a NPN transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

The complementary PNP is the 2STF2340.

General features

■ Very low collector-emitter saturation voltage

■ High current gain characteristic

■ Fast switching speed

■ Miniature SOT-89 plastic package for surface mounting circuits

■ In compliance with the 2002/93/EC European Directive

Applications

■ LED

■ Motherboard & hard disk drive

■ Mobile equipment

■ Battery charger

■ Voltage regulation