Description

This device is an N-channel Power MOSFET

developed using the second generation of

MDmesh™ technology. This revolutionary Power

MOSFET associates a vertical structure to the

company’s strip layout to yield one of the world’s

lowest on-resistance and gate charge. It is

therefore suitable for the most demanding high

efficiency converters.

Features

• Designed for automotive applications and

AEC-Q101 qualified

• 100 avalanche tested

• Low input capacitance and gate charge

• Low gate input resistance

Applications

• Switching applications