DESCRIPTION

ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.

FEATURE

● -30V/-4.0A, RDS(ON) = 55mΩ (Typ.) @VGS = -10V

● -30V/-3.2A, RDS(ON) = 62mΩ @VGS = -4.5V

● -30V/-1.2A, RDS(ON) = 90mΩ @VGS = -2.5V

● Super high density cell design for Extremely low RDS(ON)

● Exceptional on-resistance and maximum DC current capability

● SOT-23 package design