PRODUCT DESCRIPTION

The SST38VF166 consists of three memory banks, 2 each 512K x16 bits sector mode flash EEPROM plus a 4K x16 bits word alterable E2PROM manufactured with SST’s proprietary, high performance SuperFlash Technology. The SST38VF166 erases and programs with a single power supply. The internal Erase/Program in the E2 bank is transparent to the user. The device conforms to (proposed) JEDEC standard pinouts for word-wide memories.

FEATURES:

• Single 2.7-3.6V Read and Write Operations

• Separate Memory Banks for Code or Data

– Simultaneous Read and Write Capability

• Superior Reliability

– Endurance:

E2 bank - 500,000 Cycles (typical)

Flash bank - 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption

– Active Current, Read: 15 mA (typical)

– Active Current, Concurrent Read while Write: 40 mA (typical)

– Standby Current: 3 µA (typical)

– Auto Low Power Mode Current: 3 µA (typical)

• Fast Write Operation

– Flash Bank-Erase + Program: 8 sec (typical)

– Flash Block-Erase + Program: 500 ms (typical)

– Flash Sector-Erase + Program: 30 ms (typical)

– E2 bank Word-Write: 9 ms (typical)

• Fixed Erase, Program, Write Times

– Remain constant after cycling

• Read Access Time

– 70 ns

• Latched Address and Data

• End-of-Write Detection

– Toggle Bit

– Data# Polling

• E2 Bank:

– Word-Write (Auto Erase before Program)

– Sector-Erase (32 Words) + Word-Program (same as Flash bank)

• Flash Bank: Two Small Erase Element Sizes

– 1 KWords per Sector or 32 KWords per Block

– Erase either element before Word-Program

• CMOS I/O Compatibility

• JEDEC Standard Command Set

• Packages Available

– 48-Pin TSOP (12mm x 20mm)

• Continuous Hardware and Software Data Protection (SDP)

• A One Time Programmable (OTP) E2 Sector