位置:SST34HF1682D-70-4E-LSE > SST34HF1682D-70-4E-LSE详情

SST34HF1682D-70-4E-LSE中文资料

厂家型号

SST34HF1682D-70-4E-LSE

文件大小

488.09Kbytes

页面数量

38

功能描述

16 Mbit Concurrent SuperFlash 2/4/8 Mbit SRAM ComboMemory

16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory

数据手册

下载地址一下载地址二

简称

SST

生产厂商

Silicon Storage Technology, Inc

中文名称

官网

SST34HF1682D-70-4E-LSE数据手册规格书PDF详情

PRODUCT DESCRIPTION

The SST34HF16x2C/D/S ComboMemory devices integrate either a 1M x16 or 2M x8 CMOS flash memory bank with either a 128K x16/256K x8, 256K x16/512 x8, or 512K x16/1024K x8 CMOS SRAM or pseudo SRAM (PSRAM) memory bank in a multi-chip package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability compared with alternate approaches. The SST34HF16x2C/D/S devices are ideal for applications such as cellular phones, GPS devices, PDAs, and other portable electronic devices in a low power and small form factor system.

FEATURES:

• Flash Organization: 1M x16 or 2M x8

• Dual-Bank Architecture for Concurrent Read/Write Operation

– 16 Mbit: 4 Mbit + 12 Mbit

• (P)SRAM Organization:

– 2 Mbit: 128K x16 or 256K x8

– 4 Mbit: 256K x16 or 512K x8

– 8 Mbit: 512K x16 or 1024K x8

• Single 2.7-3.3V Read and Write Operations

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption:

– Active Current: 25 mA (typical)

– Standby Current: 20 µA (typical)

• Hardware Sector Protection (WP#)

– Protects 4 outer most sectors (4 KWord) in the larger bank by holding WP# low and unprotects by holding WP# high

• Hardware Reset Pin (RST#)

– Resets the internal state machine to reading data array

• Byte Selection for Flash (CIOF pin)

– Selects 8-bit or 16-bit mode

• Sector-Erase Capability

– Uniform 2 KWord sectors

• Block-Erase Capability

– Uniform 32 KWord blocks

• Read Access Time

– Flash: 70 ns

– (P)SRAM: 70 ns

• Erase-Suspend / Erase-Resume Capabilities

• Security ID Feature

– SST: 128 bits

– User: 128 bits

• Latched Address and Data

• Fast Erase and Word-/Byte-Program (typical):

– Sector-Erase Time: 18 ms

– Block-Erase Time: 18 ms

– Chip-Erase Time: 35 ms

– Word-Program Time: 7 µs

• Automatic Write Timing

– Internal VPP Generation

• End-of-Write Detection

– Toggle Bit

– Data# Polling

– Ready/Busy# pin

• CMOS I/O Compatibility

• JEDEC Standard Command Set

• Packages Available

– 56-ball LFBGA (8mm x 10mm)

– 62-ball LFBGA (8mm x 10mm)

SST34HF1682D-70-4E-LSE产品属性

  • 类型

    描述

  • 型号

    SST34HF1682D-70-4E-LSE

  • 制造商

    SST

  • 制造商全称

    Silicon Storage Technology, Inc

  • 功能描述

    16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory

更新时间:2025-10-8 11:10:00
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