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SST34HF1642D中文资料
SST34HF1642D数据手册规格书PDF详情
PRODUCT DESCRIPTION
The SST34HF16x2C/D/S ComboMemory devices integrate either a 1M x16 or 2M x8 CMOS flash memory bank with either a 128K x16/256K x8, 256K x16/512 x8, or 512K x16/1024K x8 CMOS SRAM or pseudo SRAM (PSRAM) memory bank in a multi-chip package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability compared with alternate approaches. The SST34HF16x2C/D/S devices are ideal for applications such as cellular phones, GPS devices, PDAs, and other portable electronic devices in a low power and small form factor system.
FEATURES:
• Flash Organization: 1M x16 or 2M x8
• Dual-Bank Architecture for Concurrent Read/Write Operation
– 16 Mbit: 4 Mbit + 12 Mbit
• (P)SRAM Organization:
– 2 Mbit: 128K x16 or 256K x8
– 4 Mbit: 256K x16 or 512K x8
– 8 Mbit: 512K x16 or 1024K x8
• Single 2.7-3.3V Read and Write Operations
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption:
– Active Current: 25 mA (typical)
– Standby Current: 20 µA (typical)
• Hardware Sector Protection (WP#)
– Protects 4 outer most sectors (4 KWord) in the larger bank by holding WP# low and unprotects by holding WP# high
• Hardware Reset Pin (RST#)
– Resets the internal state machine to reading data array
• Byte Selection for Flash (CIOF pin)
– Selects 8-bit or 16-bit mode
• Sector-Erase Capability
– Uniform 2 KWord sectors
• Block-Erase Capability
– Uniform 32 KWord blocks
• Read Access Time
– Flash: 70 ns
– (P)SRAM: 70 ns
• Erase-Suspend / Erase-Resume Capabilities
• Security ID Feature
– SST: 128 bits
– User: 128 bits
• Latched Address and Data
• Fast Erase and Word-/Byte-Program (typical):
– Sector-Erase Time: 18 ms
– Block-Erase Time: 18 ms
– Chip-Erase Time: 35 ms
– Word-Program Time: 7 µs
• Automatic Write Timing
– Internal VPP Generation
• End-of-Write Detection
– Toggle Bit
– Data# Polling
– Ready/Busy# pin
• CMOS I/O Compatibility
• JEDEC Standard Command Set
• Packages Available
– 56-ball LFBGA (8mm x 10mm)
– 62-ball LFBGA (8mm x 10mm)
SST34HF1642D产品属性
- 类型
描述
- 型号
SST34HF1642D
- 制造商
SST
- 制造商全称
Silicon Storage Technology, Inc
- 功能描述
16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SST |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
SST |
24+ |
BGA |
6232 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
SST |
24+ |
BGA |
4500 |
原装正品!公司现货!欢迎来电! |
|||
SST |
24+ |
BGA |
65200 |
一级代理/放心采购 |
|||
SST |
2447 |
BGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
SST |
21+ |
BGA |
10000 |
原装现货假一罚十 |
|||
SST |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
SST |
22+ |
BGA |
20000 |
保证原装正品,假一陪十 |
|||
SST |
24+ |
BGA |
5000 |
只做原装正品现货 |
|||
SST |
24+ |
BGA |
6000 |
只做原装,欢迎询价,量大价优 |
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Silicon Storage Technology, Inc
Silicon Storage Technology, Inc. (SST)是SuperFlash®技术的创造者,这是一种创新、高度可靠和多功能的NOR闪存技术。SST是Microchip Technology Inc.的全资子公司,专注于向代工厂、集成器件制造商(IDMs)和无晶圆厂半导体公司授权嵌入式非易失性存储器(NVM)技术,以满足不断增长的汽车、安全智能卡、物联网(IoT)、人工智能(AI)、工业和消费市场中的应用需求。 SST拥有超过190名员工,办事处分布在美国、欧洲和亚洲,设有专门的工艺、设计、测试和可靠性团队,致力于与客户合作,轻松地将其独特、可靠且经过专利保护的技术集成到