位置:SST34HF1621C > SST34HF1621C详情

SST34HF1621C中文资料

厂家型号

SST34HF1621C

文件大小

648.33Kbytes

页面数量

38

功能描述

16 Mbit Concurrent SuperFlash 2/4 Mbit SRAM ComboMemory

数据手册

下载地址一下载地址二

简称

SST

生产厂商

Silicon Storage Technology, Inc

中文名称

官网

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SST34HF1621C数据手册规格书PDF详情

PRODUCT DESCRIPTION

The SST34HF16x1C ComboMemory devices integrate either a 1M x16 or 2M x8 CMOS flash memory bank with either a 128K x16 or 256K x16 CMOS SRAM memory bank in a multi-chip package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability compared with alternate approaches. The SST34HF16x1C devices are ideal for applications such as cellular phones, GPS devices, PDAs, and other portable electronic devices in a low power and small form factor system.

FEATURES:

• Flash Organization: 1M x16 or 2M x8

• Dual-Bank Architecture for Concurrent Read/Write Operation

– Bottom Sector Protection

– 16 Mbit: 12 Mbit + 4 Mbit

• SRAM Organization:

– 2 Mbit: 128K x16

– 4 Mbit: 256K x16

• Single 2.7-3.3V Read and Write Operations

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption:

– Active Current: 25 mA (typical)

– SRAM Standby Current: 20 µA (typical)

• Hardware Sector Protection (WP#)

– Protects 4 outer most sectors (4 KWord) in the larger bank by holding WP# low and unprotects by holding WP# high

• Hardware Reset Pin (RST#)

– Resets the internal state machine to reading data array

• Byte Selection for Flash (CIOF pin)

– Selects 8-bit or 16-bit mode (56-ball package only)

• Sector-Erase Capability

– Uniform 2 KWord sectors

• Block-Erase Capability

– Uniform 32 KWord blocks

• Read Access Time

– Flash: 70 ns

– SRAM: 70 ns

• Erase-Suspend / Erase-Resume Capabilities

• Security ID Feature

– SST: 128 bits

– User: 128 bits

• Latched Address and Data

• Fast Erase and Program (typical):

– Sector-Erase Time: 18 ms

– Block-Erase Time: 18 ms

– Chip-Erase Time: 35 ms

– Program Time: 7 µs

• Automatic Write Timing

– Internal VPP Generation

• End-of-Write Detection

– Toggle Bit

– Data# Polling

– Ready/Busy# pin

• CMOS I/O Compatibility

• JEDEC Standard Command Set

• Packages Available

– 56-ball LFBGA (8mm x 10mm)

– 62-ball LFBGA (8mm x 10mm)

• All non-Pb (lead-free) devices are RoHS compliant

更新时间:2025-6-20 10:11:00
供应商 型号 品牌 批号 封装 库存 备注 价格
SST
23+
FBGA
98900
原厂原装正品现货!!
SST
2021+
FBGA
6800
原厂原装,欢迎咨询
SST
25+
FBGA
13800
原装,请咨询
SST
BGA
650
正品原装--自家现货-实单可谈
SST
2016+
FBGA
6528
只做原厂原装现货!终端客户个别型号可以免费送样品!
SST
24+
BGA
6232
公司原厂原装现货假一罚十!特价出售!强势库存!
SST
24+
BGA
4500
原装正品!公司现货!欢迎来电!
SST
23+
FBGA
8560
受权代理!全新原装现货特价热卖!
SST
新年份
BGA
3500
绝对全新原装现货,欢迎来电查询
SST
24+
BGA
65200
一级代理/放心采购

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Silicon Storage Technology, Inc

中文资料: 7495条

Silicon Storage Technology, Inc. (SST)是SuperFlash®技术的创造者,这是一种创新、高度可靠和多功能的NOR闪存技术。SST是Microchip Technology Inc.的全资子公司,专注于向代工厂、集成器件制造商(IDMs)和无晶圆厂半导体公司授权嵌入式非易失性存储器(NVM)技术,以满足不断增长的汽车、安全智能卡、物联网(IoT)、人工智能(AI)、工业和消费市场中的应用需求。 SST拥有超过190名员工,办事处分布在美国、欧洲和亚洲,设有专门的工艺、设计、测试和可靠性团队,致力于与客户合作,轻松地将其独特、可靠且经过专利保护的技术集成到