位置:S29WS064N0PBAI110 > S29WS064N0PBAI110详情

S29WS064N0PBAI110中文资料

厂家型号

S29WS064N0PBAI110

文件大小

1091.58Kbytes

页面数量

99

功能描述

256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY

数据手册

下载地址一下载地址二到原厂下载

简称

SPANSION飞索

生产厂商

SPANSION

中文名称

飞索半导体官网

S29WS064N0PBAI110数据手册规格书PDF详情

General Description

The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks using separate data and address pins. These products can operate up to 80 MHz and use a single VCC of 1.7 V to 1.95 V that makes them ideal for today’s demanding wireless applications requiring higher density, better performance and lowered power consumption.

Distinctive Characteristics

■ Single 1.8 V read/program/erase (1.70–1.95 V)

■ 110 nm MirrorBit™ Technology

■ Simultaneous Read/Write operation with zero

latency

■ 32-word Write Buffer

■ Sixteen-bank architecture consisting of 16/8/4

Mwords for WS256N/128N/064N, respectively

■ Four 16 Kword sectors at both top and bottom of

memory array

■ 254/126/62 64 Kword sectors (WS256N/128N/

064N)

■ Programmable burst read modes

— Linear for 32, 16 or 8 words linear read with or

without wrap-around

— Continuous sequential read mode

■ SecSi™ (Secured Silicon) Sector region consisting

of 128 words each for factory and customer

■ 20-year data retention (typical)

■ Cycling Endurance: 100,000 cycles per sector

(typical)

■ RDY output indicates data available to system

■ Command set compatible with JEDEC (42.4)

standard

■ Hardware (WP#) protection of top and bottom

sectors

■ Dual boot sector configuration (top and bottom)

■ Offered Packages

— WS064N: 80-ball FBGA (7 mm x 9 mm)

— WS256N/128N: 84-ball FBGA (8 mm x 11.6 mm)

■ Low VCC write inhibit

■ Persistent and Password methods of Advanced

Sector Protection

■ Write operation status bits indicate program and

erase operation completion

■ Suspend and Resume commands for Program and

Erase operations

■ Unlock Bypass program command to reduce

programming time

■ Synchronous or Asynchronous program operation,

independent of burst control register settings

■ ACC input pin to reduce factory programming time

■ Support for Common Flash Interface (CFI)

■ Industrial Temperature range (contact factory)

S29WS064N0PBAI110产品属性

  • 类型

    描述

  • 型号

    S29WS064N0PBAI110

  • 制造商

    SPANSION

  • 制造商全称

    SPANSION

  • 功能描述

    256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY

更新时间:2025-8-16 9:38:00
供应商 型号 品牌 批号 封装 库存 备注 价格
SPANSION
23+
BGA
50000
全新原装正品现货,支持订货
Cypress Semiconductor Corp
21+
48-TFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
Cypress Semiconductor Corp
24+
84-FBGA(11.6x8)
56200
一级代理/放心采购
CYPRESS
20+
BGA-84
200
就找我吧!--邀您体验愉快问购元件!
赛普拉斯/飞索
22+
NA
500000
万三科技,秉承原装,购芯无忧
Cypress Semiconductor Corp
25+
84-VFBGA
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
CYPRESS SEMICONDUCTOR/赛普拉斯
两年内
N/A
489
原装现货,实单价格可谈
Cypress
25+
电联咨询
7800
公司现货,提供拆样技术支持
CYPRESS/赛普拉斯
24+
FBGA84
60000
CypressSemiconductorCorp
19+
68000
原装正品价格优势