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S29GL128P11FFI010中文资料
S29GL128P11FFI010数据手册规格书PDF详情
1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
General Description
The Spansion S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.
Distinctive Characteristics
■ Single 3V read/program/erase (2.7-3.6 V)
■ Enhanced VersatileI/O™ control
– All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC
■ 90 nm MirrorBit process technology
■ 8-word/16-byte page read buffer
■ 32-word/64-byte write buffer reduces overall programming time for multiple-word updates
■ Secured Silicon Sector region
– 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number
– Can be programmed and locked at the factory or by the customer
■ Uniform 64 Kword/128 Kbyte Sector Architecture
– S29GL01GP: One thousand twenty-four sectors
– S29GL512P: Five hundred twelve sectors
– S29GL256P: Two hundred fifty-six sectors
– S29GL128P: One hundred twenty-eight sectors
■ 100,000 erase cycles per sector typical
■ 20-year data retention typical
■ Offered Packages
– 56-pin TSOP
– 64-ball Fortified BGA
■ Suspend and Resume commands for Program and Erase operations
■ Write operation status bits indicate program and erase operation completion
■ Unlock Bypass Program command to reduce programming time
■ Support for CFI (Common Flash Interface)
■ Persistent and Password methods of Advanced Sector Protection
■ WP#/ACC input
– Accelerates programming time (when VHH is applied) for greater throughput during system production
– Protects first or last sector regardless of sector protection settings
■ Hardware reset input (RESET#) resets device
■ Ready/Busy# output (RY/BY#) detects program or erase cycle completion
S29GL128P11FFI010产品属性
- 类型
描述
- 型号
S29GL128P11FFI010
- 功能描述
闪存 128Mb 3V 100ns Parallel NOR 闪存
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SPANSION |
24+ |
NA |
6850 |
只做原装正品现货或订货假一赔十! |
|||
SPANSION |
18+ |
BGA64 |
85600 |
保证进口原装可开17%增值税发票 |
|||
SPANSION |
24+ |
65200 |
|||||
SPANSION |
24+ |
原厂原装 |
5850 |
进品原装,现货特卖 |
|||
SPANSION |
23+ |
BGA64 |
50000 |
全新原装正品现货,支持订货 |
|||
CYPRESS/赛普拉斯 |
25+ |
FBGA-64 |
32000 |
CYPRESS/赛普拉斯全新特价S29GL128P11FFI010即刻询购立享优惠#长期有货 |
|||
CYPRESS |
19+ |
BGA |
8000 |
全新原装公司现货
|
|||
CYPRESS/赛普拉斯 |
23+/24+ |
FBGA-64 |
9865 |
原装正品现货库存,价格美丽可开13点税 |
|||
CYPRESS/赛普拉斯 |
25+ |
FBGA-64 |
15000 |
只做进口原装假一罚百 |
|||
Cypress |
25+ |
BGA |
8800 |
公司只做原装,详情来电咨询 |
S29GL128P11FFI010 价格
参考价格:¥25.4123
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S29GL128P11FFI010相关电子新闻
闪存S29GL128P11FFI010代理原装正品现货库存-和诺泰
闪存S29GL128P11FFI010代理原装正品现货库存-和诺泰
2019-6-27
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SPANSION相关芯片制造商
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