位置:S25FL129P_00 > S25FL129P_00详情

S25FL129P_00中文资料

厂家型号

S25FL129P_00

文件大小

3130.23Kbytes

页面数量

69

功能描述

128-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus

数据手册

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生产厂商

SPANSION

S25FL129P_00数据手册规格书PDF详情

General Description

The S25FL129P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device is offered in two configurations: 256 uniform 64 KB sectors with the two (Top or Bottom) 64 KB sectors further split up into thirty-two 4 KB sub sectors, or 64 uniform 256 KB sectors. The S25FL129P device is backward compatible with the S25FL128P (uniform 256 KB sector) device.

The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be programmed in-system with the standard system 3.0-volt VCC supply.

Distinctive Characteristics

Architectural Advantages

■ Single power supply operation

– Full voltage range: 2.7 to 3.6V read and write operations

■ Memory architecture

– Uniform 64 KB sectors

– Top or bottom parameter block (Two 64-KB sectors broken

down into sixteen 4-KB sub-sectors each)

– Uniform 256 KB sectors (no 4-KB sub-sectors)

– 256-byte page size

– Backward compatible with the S25FL128P (uniform 256 KB sector)

device

■ Program

– Page Program (up to 256 bytes) in 1.5 ms (typical)

– Program operations are on a page by page basis

– Accelerated programming mode via 9V W#/ACC pin

– Quad Page Programming

■ Erase

– Bulk erase function

– Sector erase (SE) command (D8h) for 64 KB and 256 KB sectors

– Sub-sector erase (P4E) command (20h) for 4 KB sectors

(for uniform 64-KB sector device only)

– Sub-sector erase (P8E) command (40h) for 8 KB sectors

(for uniform 64-KB sector device only)

■ Cycling endurance

– 100,000 cycles per sector typical

■ Data retention

– 20 years typical

■ Device ID

– JEDEC standard two-byte electronic signature

– RES command one-byte electronic signature for backward

compatibility

■ One time programmable (OTP) area for permanent, secure

identification; can be programmed and locked at the factory

or by the customer

■ CFI (Common Flash Interface) compliant: allows host system

to identify and accommodate multiple flash devices

■ Process technology

– Manufactured on 0.09 µm MirrorBit® process technology

■ Package option

– Industry Standard Pinouts

– 16-pin SO package (300 mils)

– 8-contact WSON package (6 x 8 mm)

– 24-ball BGA (6 x 8 mm) package, 5 x 5 pin configuration

– 24-ball BGA (6 x 8 mm) package, 6 x 4 pin configuration

Performance Characteristics

■ Speed

– Normal READ (Serial): 40 MHz clock rate

– FAST_READ (Serial): 104 MHz clock rate (maximum)

– DUAL I/O FAST_READ: 80 MHz clock rate or

20 MB/s effective data rate

– QUAD I/O FAST_READ: 80 MHz clock rate or

40 MB/s effective data rate

■ Power saving standby mode

– Standby Mode 80 µA (typical)

– Deep Power-Down Mode 3 µA (typical)

Memory Protection Features

■ Memory protection

– W#/ACC pin works in conjunction with Status Register Bits to

protect specified memory areas

– Status Register Block Protection bits (BP2, BP1, BP0) in status

更新时间:2026-2-14 11:10:00
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