位置:MBM29DL800BA-90PFTR > MBM29DL800BA-90PFTR详情

MBM29DL800BA-90PFTR中文资料

厂家型号

MBM29DL800BA-90PFTR

文件大小

601.93Kbytes

页面数量

57

功能描述

FLASH MEMORY CMOS 8M (1M x 8 / 512K x 16) BIT

FLASH MEMORY CMOS 8M(1M x 8 / 512K x 16) BIT

数据手册

下载地址一下载地址二到原厂下载

简称

SPANSION飞索

生产厂商

SPANSION

中文名称

飞索半导体官网

MBM29DL800BA-90PFTR数据手册规格书PDF详情

■ GENERAL DESCRIPTION

The MBM29DL800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. The MBM29DL800TA/BA are offered in a 48-pin TSOP(I) and 48-ball FBGA packages. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.

■ FEATURES

• Single 3.0 V read, program, and erase

Minimizes system level power requirements

• Simultaneous operations

Read-while-Erase or Read-while-Program

• Compatible with JEDEC-standard commands

Uses same software commands as E2PROMs

• Compatible with JEDEC-standard world-wide pinouts (Pin compatible with MBM29LV800TA/BA)

48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)

48-ball FBGA (Package suffix: PBT)

• Minimum 100,000 program/erase cycles

• High performance

70 ns maximum access time

• Sector erase architecture

Two 16K byte, four 8K bytes, two 32K byte, and fourteen 64K bytes.

Any combination of sectors can be concurrently erased. Also supports full chip erase.

• Boot Code Sector Architecture

T = Top sector

B = Bottom sector

• Embedded EraseTM Algorithms

Automatically pre-programs and erases the chip or any sector

• Embedded ProgramTM Algorithms

Automatically writes and verifies data at specified address

• Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Ready/Busy output (RY/BY)

Hardware method for detection of program or erase cycle completion

• Automatic sleep mode

When addresses remain stable, automatically switch themselves to low power mode.

• Low VCC write inhibit ≤ 2.5 V

• Erase Suspend/Resume

Suspends the erase operation to allow a read in another sector within the same device

• Sector protection

Hardware method disables any combination of sectors from program or erase operations

• Sector Protection Set function by Extended sector protection command

• Fast Programming Function by Extended Command

• Temporary sector unprotection

Temporary sector unprotection via the RESET pin.

MBM29DL800BA-90PFTR产品属性

  • 类型

    描述

  • 型号

    MBM29DL800BA-90PFTR

  • 制造商

    SPANSION

  • 制造商全称

    SPANSION

  • 功能描述

    FLASH MEMORY CMOS 8M(1M x 8/512K x 16) BIT

更新时间:2025-8-15 16:33:00
供应商 型号 品牌 批号 封装 库存 备注 价格
FUJITSU/富士通
23+
FBGA-48
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
FUJITSU/富士通
23+
TSSOP
10880
原装正品,支持实单
FUJITSU/富士通
24+
TSSOP
22055
郑重承诺只做原装进口现货
FUJITSU
23+
NA
19960
只做进口原装,终端工厂免费送样
24+
SOP48
7003
FUJITSU
24+
TSOP
35200
一级代理/放心采购
FUJ
24+
BGA
5632
公司原厂原装现货假一罚十!特价出售!强势库存!
FUJI
22+
BGA
3000
原装正品,支持实单
FUJ
05+
原厂原装
2551
只做全新原装真实现货供应
FUJ
23+
NA
1300
全新原装假一赔十