位置:AM29PL320DT90 > AM29PL320DT90详情

AM29PL320DT90中文资料

厂家型号

AM29PL320DT90

文件大小

947.82Kbytes

页面数量

50

功能描述

32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory

数据手册

下载地址一下载地址二到原厂下载

简称

SPANSION飞索

生产厂商

SPANSION

中文名称

飞索半导体官网

AM29PL320DT90数据手册规格书PDF详情

GENERAL DESCRIPTION

The Am29PL320D is a 32 Mbit, 3.0 Volt-only page mode Flash memory device organized as 2,097,152 words or 1,048,576 double words. The device is offered in an 84-ball FBGA package. The word-wide data (x16) appears on DQ15–DQ0; the double wordwide (x32) data appears on DQ31–DQ0. The device is available in both top and bottom boot versions. This device can be programmed in-system or with in standard EPROM programmers. A 12.0 V VPP or 5.0 VCC are not required for write or erase operations.

DISTINCTIVE CHARACTERISTICS

ARCHITECTURAL ADVANTAGES

■ 32 Mbit Page Mode device

— Word (16-bit) or double word (32-bit) mode

selectable via WORD# input

— Page size of 8 words/4 double words: Fast page

read access from random locations within the

page

■ Single power supply operation

— Full voltage range: 2.7 to 3.6 volt read and write

operations for battery-powered applications

— Regulated voltage range: 3.0 to 3.6 volt read and

write operations and for compatibility with high

performance 3.3 volt microprocessors

■ Flexible sector architecture

— Sector sizes (x16 configuration): One 16 Kword,

two 8 Kword, one 96 Kword and fifteen 128

Kword sectors

— Supports full chip erase

■ SecSi™ (Secured Silicon) Sector region

— Current version of device has 512 words (256

double words); future versions will have 128

words (64 double words)

■ Top or bottom boot block configuration

■ Manufactured on 0.23 µm process technology

■ 20-year data retention at 125°C

■ Minimum 1 million erase cycles guarantee

per sector

PERFORMANCE CHARACTERISTICS

■ High performance read access times

— Page access times as fast as 20 ns

— Random access times as fast as 60 ns

■ Power consumption (typical values)

— Initial page read current: 4 mA (1 MHz),

40 mA (10 MHz)

— Intra-page read current: 15 mA (10 MHz),

50 mA (33 MHz)

— Program/erase current: 25 mA

— Standby mode current: 2 µA

更新时间:2025-8-17 10:50:00
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