Description

The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.

Features

• Ultra small package

• Low voltage operation

• Low noise: NF = 1.5dB (typ.) at 900MHz

• High gain: Ga = 18dB (typ.) at 900MHz

• Low cross-modulation

• High stability

• Built-in gate-protection diode

Application

UHF band amplifier, mixer and oscillator