Description

DM-231 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate. It is suitable for angle of rotation detection.

Features

• Low magnetic field and high sensitivity: bridge type stands for large output voltage 150 mVp-p (Min.) at VCC=5 V, H=14400 A/m

• Fitted with bias magnet: stable output.

• High reliability: Achieved through silicon nitride protective film.

Applications

• Non-contact angle of rotation detection.

• Contactless potentiometer.