Description

The CXK77B3610GB-6/7 is a high speed 1M bit Bi-CMOS synchronous statis RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and features the delayed write system to reduce the dead cycles.

Features

• Fast cycle time (Cycle) (Frequency)

CXK77B3610GB-6 6ns 166MHz

CXK77B3610GB-7 7ns 142MHz

• Inputs and outputs are LVTTL/LVCMOS compatible

• Single 3.3V power supply: 3.3V ± 0.15V

• Byte-write possible

• OE asynchronization

• JTAG test circuit

• Package 119TBGA

• 3 kinds of synchronous operation mode

Register-Register mode (R-R mode)

Register-Flow Thru mode (R-F mode)

Register-Latch mode (R-L mode)