Applications

 LTE, GSM, WCDMA, HSDPA macro-base and micro-base

stations

 L and S band ultra-low-noise receivers

 Cellular repeaters, small-cell, macro-cell, DAS, and RRH/RRUs

 High-temperature transceiver applications to +105 °C

Features

 Part of complete SDARS LNA reference design

 Ultra-low reference design NF: 0.64 dB @ 3.5 GHz

 High gain: 33 dB @ 3.5 GHz

 Low quiescent current: 115 mA

 Stage 1 and Stage 2 adjustable current

 Small QFN (16-pin, 4 x 4 mm) Pb-free package

(MSL1, 260 C per JEDEC J-STD-020)

Description

The SKY67175-306LF is a two-stage, GaAs pHEMT low-noise

amplifier (LNA) with active bias and high-linearity performance.

The pHEMT front end of the device provides an ultra-low noise

figure (NF) while the cascode output stage provides high gain,

linearity, and efficiency.

With excellent thermal performance, the SKY67175-306LF is

rated for operation up to +105 °C.

The SKY67175-306LF is provided in a 4 x 4 mm, 16-pin Quad Flat

No-Lead (QFN) package. A functional block diagram is shown in

Figure 1. The pin configuration and package are shown in

Figure 2. Signal pin assignments and functional pin descriptions

are provided in Table 1.