Applications

• CDMA, WCDMA, TD-SCDMA, WiMAX, and LTE cellular infrastructure

• Ultra low-noise systems

Features

• Ultra Low Noise Figure: 0.8 dB @ 2.6 GHz

• Input and output return loss > 18 dB @ 2.6 GHz

• High IIP3 performance: +16.7 dBm @ 2.6 GHz

• Adjustable supply current and gain

• Temperature and process-stable active bias

• Miniature DFN (8-pin, 2 x 2 mm) package (MSL1 @ 260 °C per JEDEC J-STD-020)

Description

The SKY67102-396LF is GaAs, pHEMT Low-Noise Amplifier (LNA) with an active bias and high linearity performance. The advanced GaAs pHEMT enhancement mode process provides excellent return loss, low noise, and high linearity performance. The internal active bias circuitry provides stable performance over temperature and process variation. The device offers the ability to externally adjust supply current and gain. Supply voltage is applied to the RFOUT/VDD pin through an RF choke inductor. Pin 4 (VIN) should be connected to RFOUT/VDD through an external resistor to control the supply current. The RFIN and RFOUT/VDD pins should be DC blocked to ensure proper operation. Pin 5 (FEEDBACK) is connected through an RC network to externally adjust the gain of the device without affecting the Noise Figure (NF) of the LNA. The SKY67102-396LF operates in the frequency range of 2.0 to 3.0 GHz with proper tuning. For lower frequency operation, the pin-compatible SKY67100-396LF or SKY67101-396LF should be used. The LNA is manufactured in a compact, 2 x 2 mm, 8-pin Dual Flat No-Lead (DFN) package. A functional block diagram is shown in Figure 1. The pin configuration and package are shown in Figure 2. Signal pin assignments and functional pin descriptions are provided in Table 1.