Features

 InGaP HBT technology

 –47 dBc ACPR @ ±10 MHz, +27 dBm

 31 dB gain

 High efficiency

 Low transistor junction temperature

 Matched for a 50 Ω system

 Low profile miniature surface-mount package; RoHS compliant

 Multi-carrier capability

 Surface-mount (14-pin, 7  7  1.3 mm) package

(MSL3, 260 C per JEDEC J-STD-020)