Main Features

 Advanced MOSFETprocess technology

 Special designed for PWM, load switching and

general purpose applications

 Ultra low on-resistance with low gate charge

 Fast switching and reverse body recovery

 150℃ operating temperature

Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistancewithhigh repetitive avalanche rating. These features combine to make this design an extremely efficient andreliabledevice for use in power switching application and a wide variety of other applications.