Features and Benefits:

■ Advanced trench MOSFET process technology

■ Special designed for PWM, load switching and

generalpurpose applications

■ Ultra low on-resistance with low gate charge

■ Fast switching and reverse body recovery

■ 150℃ operating temperature

Description:

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the

on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely

efficient and reliable device for use in power switching application and a wide variety of other applications