Features and Benefits:

 Advanced MOSFETprocess technology

 Special designed for PWM, load switching and

general purpose applications

 Ultra low on-resistance with low gate charge

 Fast switching and reverse body recovery

 150℃ operating temperature

Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduce sthe

on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely

efficient and reliable device for use in power switching application and a wide variety of otherapplications