DESCRIPTION

The SVT035R5ND(MJ)(T) is an N-channel enhancement mode

power MOS field effect transistor which is produced using Silan's

LVMOS technology. The improved process and cell structure have

been especially tailored to minimize on-state resistance, provide

superior switching performance.

This device is widely used in the fields of uninterruptible power

supplies and power management of inverter systems.

FEATURES

 100A, 30V, RDS(on)(typ.)=4.0m@VGS=10V

 Low gate charge

 Low Crss

 Fast switching

 Improved dv/dt capability