DESCRIPTION

SVGQ046R8NLPD is dual N-channel enhancement mode power

MOS field effect transistor which is produced using Silan's LVMOS

technology. The improved process and cell structure have been

especially tailored to minimize on-state resistance, provide superior

switching performance and high avalanche breakdown tolerance.

This device is widely used in power management for UPS and

Inverter Systems.

FEATURES

 AEC-Q101 qualified

 63A, 40V, RDS(on)(typ.)=5.6m@VGS=10V

 Low gate charge

 Low Crss

 Fast switching

 Extreme dv/dt rated

 100% avalanche tested

 Pb-free lead plating

 RoHS compliant

 Max. junction temperature: Tjmax.=175 ºC