GENERAL DESCRIPTION

SVF6N70MJG/D/K/N is an N-channel enhancement mode power MOS

field effect transistor which is produced using Silan proprietary F-CellTM

structure VDMOS technology. The improved process and cell structure

have been especially tailored to minimize on-state resistance, provide

superior switching performance, and withstand high energy pulse in the

avalanche and commutation mode.

These devices are widely used in AC-DC power supplies, DC-DC

converters and H-bridge PWM motor drivers.

FEATURES

 6A,700V,RDS(on(typ.)=1.35@VGS=10V

 Low gate charge

 Low Crss

 Fast switching

 Improved dv/dt capability