GENERAL DESCRIPTION

SVDZ24NT is an N-channel enhancement mode power MOS field effect

transistor which is produced using Silan new planar VDMOS process.

The improved planar stripe cell and the improved guard ring terminal

have been especially tailored to minimize on-state resistance, provide

superior switching performance, and withstand high energy pulse in the

avalanche and commutation mode. This device is widely used in

electrical ballast, low power switching power supply.

FEATURES

 17A,55V,RDS(on)(typ.)=45m@VGS=10V

 Low gate charge

 Low Crss

 Fast switching

 Improved dv/dt capability