GENERAL DESCRIPTION

SVD1055SA is a combination device packaged with an N-channel and a

P-channel enhancement mode MOS FET, which is produced using Silan

proprietary low-voltage planar VDMOS process. The improved process

and cell structure have been especially tailored to minimize on-state

resistance, provide superior switching performance, and withstand high

energy pulse in the avalanche and commutation mode.It's widely used in

electronic ballasts and low power SMPS.

FEATURES

 Low gate charge

 Low Crss

 Fast switching

 Improved dv/dt capability