DESCRIPTION

SVS7N70F(D)(MJ)(S)D2 is an N-channel enhancement mode high

voltage power MOSFETs produced using Silan’s super junction MOS

technology. It achieves low conduction loss and switching losses. It

leads the design engineers to their power converters with high

efficiency, high power density, and superior thermal behavior.

Furthermore, it’s universal applicable, i.e., suitable for hard and soft

switching topologies.

FEATURES

 7A, 700V, RDS(on)(typ.)=0.52@VGS=10V

 New revolutionary high voltage technology

 Ultra low gate charge

 Periodic avalanche rated

 Extreme dv/dt rated

 High peak current capability