DESCRIPTION

➤ 2SB267100MA is a schottky barrier diode chips

fabricated in silicon epitaxial planar technology;

➤ Due to special schottky barrier structure, the chips

have very low reverse leakage current ( typical

IR=0.002mA@Vr=100V ) and maximum 150°C

operation junction temperature;

➤ Low power losses, high efficiency;

➤ Guard ring construction for transient protection;

➤ High ESD capability;

➤ High surge capability;

➤ Packaged products are widely used in switching

power suppliers, polarity protection circuits and

other electronic circuits;

➤ Chip Size: 2670mm X 2670μm;

➤ Chip Thickness: 280±20μm;

➤ Have two top side electrode materials for customer

to choose, detail refer to ordering specifications.