位置:033R5NT > 033R5NT详情
033R5NT中文资料
033R5NT数据手册规格书PDF详情
DESCRIPTION
The SVT033R5NT is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan's LVMOS
technology. The improved process and cell structure have been
especially tailored to minimize on-state resistance, provide superior
switching performance.
This device is widely used in the fields of uninterruptible power
supplies and power management of inverter systems.
FEATURES
180A, 30V, RDS(on)(typ.)=2.8m@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
033R5NT 资料下载更多...
033R5NT 芯片相关型号
- 016.15571
- 033
- 1825W100ZAT1A
- 1825W100ZAT3A
- 1825W100ZAT9A
- ATS-09F-61-C1-R0
- CD74HC237M96
- E3F3-D89M-D
- FX10A80/8-P-SV1
- FX10A80/8-P-SV121
- FX10A80/8-S-SV1
- FX10A80/8-S-SV121
- GS8161E18DD-375I
- KSB250SDF4
- KSB250SDF5
- KSB250SE4
- KSB250SE5
- KSB250SM428
- LMK6CE05000CDLFT
- SPF1-AL20504-A-1-1-BX
- SPF1-BA20504-A-1-1-BX
- SPF1-BL20504-A-1-1-BX
- SPF1-BP-20504-A-1-1-BX
- SPF1-N-A20504-A-1-1-BX
- SPF1-N-L20504-A-1-1-BX
- SPF1-N-P-20504-A-1-1-BX
- TPS62870N0QWRXSRQ1
- TPS62870-Q1_V03
- TPS73201DRBR
SILAN相关芯片制造商
Datasheet数据表PDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
- P109
- P110
