Product Description

The LPT16ED is a silicon germanium low phase noise, high frequency NPN transistor for oscillator applications up to 16GHz.

The transistor exhibits low 1/f noise and provides +13 dBm typical output power at VCE of 3V and IC equal to 20 mA. It is easily operated from a single supply voltage with appropriate external passive components.

The silicon germanium technology used in this device provides outstanding high-frequency performance combined with high thermal conductivity and superior reliability under harsh operating and storage conditions.

A complete mechanical description of the transistor is available under SiGe Semiconductor Document 07MS001.

Features

◾ Low 1/f noise: -142 dBc/Hz at 100 Hz offset

◾ Phase noise: -167 dBc/Hz at 100 kHz offset

◾ Output power up to +13 dBm

◾ Operation down to 1 volt, 2 mA

◾ Gold bump pads for wire bond or flip chip (for direct die attachment)

Applications

◾ Low phase noise oscillators up to 16 GHz

◾ VCO’s, DRO’s and YIG oscillators

◾ Point-to-point radios

◾ Satellite communications

◾ Fiber optics, OC-192 and OC-768

◾ Local Multipoint Distribution Systems, LMDS