DESCRIPTION

The ILD/Q621 and ILD/Q621GB are multi-channel phototransistor optocouplers that use GaAs IRLED emitters and high gain NPN silicon phototransistors. These devices are constructed using over/under leadframe optical coupling and double molded insulation technology. This assembly process offers a withstand test voltage of 7500 VDC.

FEATURES

• Alternate Source to TLP621-2/-4 and TLP621GB-2/-4

• Current Transfer Ratio (CTR) at IF= 5 mA

ILD/Q621: 50 Min.

ILD/Q621GB: 100 Min.

• Saturated Current Transfer Ratio (CTRSAT) at IF=1 mA

ILD/Q621: 60 Typ.

ILD/Q621GB: 30 Min.

• High Collector-Emitter Voltage, BVCEO=70 V

• Dual and Quad Packages Feature:

- Reduced Board Space

- Lower Pin and Parts Count

- Better Channel to Channel CTR Match

- Improved Common Mode Rejection

• Field-Effect Stable by TRIOS (TRansparent IOn Shield)

• Isolation Test Voltage from Double Molded Package, 5300 VACRMS

• Underwriters Lab File #E52744

• VDE 0884 Available with Option 1