The HYB 5(3)117800 are 16 MBit dynamic RAMs based on the die revisions “G” & “F” and organized as 2 097 152 words by 8-bits. The HYB 5(3)117800 utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 5(3)117800 to be packaged in a standard SOJ-28 plastic package. Package with 400 mil width are available. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment.

Advanced Information

• 2 097 152 words by 8-bit organization

• 0 to 70 °C operating temperature

• Fast Page Mode operation

• Performance:

• Power dissipation:

• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh and test mode

• All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible

• 2048 refresh cycles / 32 ms (2k-refresh)

• Plastic Package: P-SOJ-28-3 400 mil