This HYB3164(5)805 is a 64 MBit dynamic RAM organized 8 388 608 x 8 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology.

Preliminary Information

• 8 388 608 words by 8-bit organization

• 0 to 70 ˚C operating temperature

• Fast access and cycle time

RAS access time:

50 ns (-50 version)

60 ns (-60 version)

Cycle time:

84 ns (-50 version)

104 ns (-60 version)

CAS access time:

13 ns ( -50 version)

15 ns ( -60 version)

• Hyper page mode (EDO) cycle time

20 ns (-50 version)

25 ns (-60 version)

• Single + 3.3 V (± 0.3V) power supply

• Low power dissipation

max. 396 active mW ( HYB 3164805J/T(L)-50)

max. 360 active mW ( HYB 3164805J/T(L)-60)

max. 504 active mW ( HYB 3165805J/T(L)-50)

max. 432 active mW ( HYB 3165805J/T(L)-60)

7.2 mW standby (TTL)

720 W standby (MOS)

14.4 mW Self Refresh (L-version only)

• Read, write, read-modify-write, CAS-before-RAS refresh (CBR),

RAS-only refresh, hidden refresh and self refresh modes

• Hyper page mode (EDO) capability

• 8192 refresh cycles/128 ms , 13 R/ 11C addresses (HYB 3164805J/T(L))

• 4096 refresh cycles/ 64 ms , 12 R/ 12C addresses (HYB 3165805J/T(L))

• Plastic Package:

P-SOJ-34-1 500 mil HYB 3164(5)805J

P-TSOPII-34-1 500 mil HYB 3164(5)805T(L)