This HYB3164(5)805A is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated on an advanced second generation 64Mbit 0,35µm-CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation.

Advanced Information

• 8 388 608 words by 8-bit organization

• 0 to 70 °C operating temperature

• Hyper Page Mode - EDO - operation

• Performance:

• Single + 3.3 V (± 0.3V) power supply

• Low power dissipation:

max. 450 active mW ( HYB 3164805AJ/AT(L)-40)

max. 360 active mW ( HYB 3164805AJ/AT(L)-50)

max. 324 active mW ( HYB 3164805AJ/AT(L)-60)

max. 612 active mW ( HYB 3165805AJ/AT(L)-40)

max. 468 active mW ( HYB 3165805AJ/AT(L)-50)

max. 432 active mW ( HYB 3165805AJ/AT(L)-60)

7.2 mW standby (LVTTL)

3.24 mW standby (LVMOS)

720 µA standby for L-version

• Read, write, read-modify-write, CAS-before-RAS refresh (CBR), RAS-only refresh, hidden refresh

• Self refresh (L-version only)

• 8192 refresh cycles/128 ms , 13 R/ 10C addresses (HYB 3164805AJ/AT)

4096 refresh cycles/ 64 ms , 12 R/ 11C addresses (HYB 3165805AJ/AT)

• 256 msec refresh period for L-versions

• Plastic Package: P-SOJ-32-1 400 mil HYB 3164(5)805AJ

P-TSOPII-32-1 400 mil HYB 3164(5)805AT(L)