Description

The LRS1805A is a combination memory organized as 4,194,304 x16 bit flash memory and 1,048,576 x16 bit Smartcombo RAM in one package.

Features

- Power supply • • • • 2.7V to 3.3V(Flash)

• • • • 2.7V to 3.1V(Smartcombo RAM)

- Operating temperature • • • • -25°C to +85°C

- Not designed or rated as radiation hardened

- 72pin CSP (LCSP072-P-0811) plastic package

- Flash memory has P-type bulk silicon, and Smartcombo RAM has P-type bulk silicon

Flash Memory

- Access Time • • • • 85 ns (Max.)

- Power supply current (The current for F-VCC pin and F-VPP pin)

Read • • • • 25 mA (Max. tCYCLE = 200ns, CMOS Input)

Word write • • • • 60 mA (Max.)

Block erase • • • • 30 mA (Max.)

Reset Power-Down • • • • 25 µA (Max. F-RST = GND ± 0.2V,

IOUT (F-RY/BY) = 0mA)

Standby • • • • 25 µA (Max. F-CE = F-RST = F-VCC ± 0.2V)

- Optimized Array Blocking Architecture

Eight 4K-word Parameter Blocks

One-hundred and twenty-seven 32K-word Main Blocks

Top Parameter Location

- Extended Cycling Capability

100,000 Block Erase Cycles (F-VPP = 1.65V to 3.3V)

1,000 Block Erase Cycles and total 80 hours (F-VPP = 11.7V to 12.3V)

- Enhanced Automated Suspend Options

Word Write Suspend to Read

Block Erase Suspend to Word Write

Block Erase Suspend to Read

Smartcombo RAM

- Access Time • • • • 85 ns (Max.)

- Cycle time • • • • 85 to 32,000 ns

- Power Supply current

Operating current • • • • 20 mA (Max. tRC, tWC = Min.)

Standby current (Data retention current) • • • • 80 µA (Max.)

Sleep Mode (Data non-retention current) • • • • 15 µA (Max.)