DESCRIPTION

The LH5PV8512 is a 4M bit Pseudo-Static RAM with a 524,288 word × 8 bit organization. It is fabricated using silicon-gate CMOS process technology.

FEATURES

• 524,288 words × 8 bit organization

• CE access time (tCEA): 120 ns (MAX.)

• Cycle time (tRC): 190 ns (MIN.)

• Power supply:

+3.0 V ± 0.15 V (Operating)

+2.2 V to +3.15 V (Data retention)

• Power consumption (MAX.):

126 mW (Operating)

95 µW (Standby = CMOS input level)

221 µW (Self-refresh = CMOS input level)

• Available for address refresh,

auto-refresh, and self-refresh modes

• 2,048 refresh cycles/32 ms

• Address non-multiple

• Not designed or rated as radiation hardened

• Package:

32-pin, 525-mil SOP

• Package material: Plastic

• Substrate material: P-type silicon

• Process: Silicon-gate CMOS

• Operating temperature: 0 - 70°C