DESCRIPTION

The LH51BV1000JY is a static RAM organized as 131,072 × 8 bits which provides low power standby mode. It is fabricated using silicon-gate CMOS process technology.

FEATURES

• Access time: 70 ns (MAX.)

• Current consumption:

Operating: 30 mA (MAX.)

5 mA (MAX.) (tRC, tWC = 1 µs)

Standby: 60 µA (MAX.)

• Data Retention:

1.0 µA (MAX.) (VCCDR = 3 V, TA = 25°C)

• Single power supply: 2.7 V to 3.6 V

• Operating temperature: -25°C to +85°C

• Fully-static operation

• Three-state output

• Not designed or rated as radiation hardened

• Package: 32-pin 6 × 10 mm CSP

• N-type bulk silicon