INTRODUCTION

Sharp’s LH28F800SU 8M Flash Memory is a revolutionary architecture which enables the design of truly mobile, high performance, personal computing and communication products. With innovative capabilities, 5 V single voltage operation and very high read/write performance, the LH28F800SU is also the ideal choice for designing embedded mass storage flash memory systems.

FEATURES

• User-Configurable x8 or x16 Operation

• User-Selectable 3.3 V or 5 V VCC

• 5 V Write/Erase Operations (5 V VPP)

– No Requirement for DC/DC Converter to Write/Erase

• 70 ns Maximum Access Time

• Minimum 2.7 V Read capability

– 160 ns Maximum Access Time (VCC = 2.7 V)

• 16 Independently Lockable Blocks

• 0.32 MB/sec Write Transfer Rate

• 100,000 Erase Cycles per Block

• Revolutionary Architecture

– Pipelined Command Execution

– Write During Erase

– Command Superset of Sharp LH28F008SA

• 5 µA (TYP.) ICC in CMOS Standby

• 1 µA (TYP.) Deep Power-Down

• State-of-the-Art 0.55 µm ETOX™ Flash Technology

• 56-Pin, 1.2 mm × 14 mm × 20 mm TSOP (Type I) Package